We have developed two novel methods to align and integrate semiconductor nanowires for electronic device application. Method 1: we developed a single nanowire manipulation system to precisely transfer and align individual nanowire or nanotube. Method 2: we developed a self-aligned technique to fabricate large numbers (> millions) of excellent nanowire devices. Both methods include only the conventional photolithography and do not require complicated equipments (such as EBL and FIB), and chemical alignment processes. Therefore, these two methods are compatible with the standard silicon technology and low-cost self-assembly bottom-up approach. We have fabricated a variety of nanowire devices, including silicon nanowire field effect transistor (SiNW FET), nanoelectromechanical switch (NEMS), nanowire test structure, nanowire chemical sensor and optoelectronic device. Compared to other nanowire assembling strategies, the self-aligned approach provides a clean fabrication route
(minimizing possible contamination) and helps developing nanowire devices with high performance.